Evolutionary optimization of TCO/mesh electrical contacts in CIGS solar cells

State of the art solar cells often require a combination of TCO and metallic grid to efficiently transport the generated current to an external circuit. Optimization of these complex contacts based on several materials with different conductivities and geometries is often still based on a traditional approach consisting of simple analytical formulas and empirical knowledge in spite of the complexity. An evolutionary algorithm combined with an electrical 2D+1D FEM model is used to optimize the shape of the metallic contact considering the material conductivities, the geometry and shadowing. The performance of two automatically designed contacts is compared with experimental results of CIGS solar cells prepared with two different TCO thicknesses

Challenges and opportunities for an efficiency boost of next generation Cu(In,Ga)Se2 solar cells: prospects for a paradigm shift

Cu(In,Ga)Se2 photovoltaic technology has notably progressed over the past years. Power conversion efficiencies above 23% were reached in spite of the polycrystalline nature of the absorber. Although efficiencies are still far from the practical limits, the material quality is approaching that of III?V compounds that yield the most efficient solar cells. The high carrier lifetime, low open circuit voltage deficit and external radiative efficiency in the single-digit percentage range suggest that the next efficiency boost may arise from the implementation of alternative device architectures. In this perspective paper, we describe the current challenges and pathways to enhance the power conversion efficiency of Cu(In,Ga)Se2 solar cells. Specifically, we suggest the use of non-graded absorbers, integration of charge selective contacts and maximization of photon recycling. We examine these concepts by a semi-empirical device modelling approach, and show that these strategies can lead to efficiencies of 29% under the AM1.5 global spectrum. An analysis of whether or not current state-of-the-art Cu(In,Ga)Se2 solar cells already benefit from photon recycling is also presented.This work received financial support partially from the Swiss State Secretary for Education, Research and Innovation (SERI) under contract number 17.00105 (EMPIR project HyMet) and from the Swiss Federal Office of Energy (SFOE) (SI/501614-01 “ImproCIS”). The EMPIR programme is co-financed by the Participating States and by the European Union's Horizon 2020 research and innovation programme

Monolithic CIGS-Perovskite Tandem Cell for an Optimal Light Harvesting Without Current Matching

We present a novel monolithic architecture for optimal light harvesting in multijunction thin film solar cells. In the configuration we consider, formed by a perovskite (PVK) cell overlying a CIGS cell, the current extracted from the two different junctions is decoupled by the insertion of a dielectric nonperiodic photonic multilayer structure. This photonic multilayer is designed by an inverse integration approach to confine the incident sunlight above the PVK band gap in the PVK absorber layer, while increasing the transparency for sunlight below the PVK band gap for an efficient coupling into the CIGS bottom cell. To match the maximum power point voltages in a parallel connection of the PVK and CIGS cells, the latter is divided into two subcells by means of a standard three-laser scribing connection. Using realistic parameters for all the layers in the multijunction architecture we predict power conversion efficiencies of 28%. This represents an improvement of 24% and 26% over the best CIGS and PVK single-junction cells, respectively, while at the same time outperforms the corresponding current-matched standard tandem configuration by more than two percentage points.Peer ReviewedPostprint (author's final draft

Deep level transient spectroscopy measurements on Mo/Cu(In,Ga)Se2/metal structure

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CIGS thin-film solar module processing: case of high-speed laser scribing

In this paper, we investigate the laser processing of the CIGS thin-film solar cells in the case of the high-speed regime. The modern ultra-short pulsed laser was used exhibiting the pulse repetition rate of 1 MHz. Two main P3 scribing approaches were investigated – ablation of the full layer stack to expose the molybdenum back-contact, and removal of the front-contact only. The scribe quality was evaluated by SEM together with EDS spectrometer followed by electrical measurements. We also modelled the electrical behavior of a device at the mini-module scale taking into account the laser-induced damage. We demonstrated, that high-speed process at high laser pulse repetition rate induced thermal damage to the cell. However, the top-contact layer lift-off processing enabled us to reach 1.7 m/s scribing speed with a minimal device degradation. Also, we demonstrated the P3 processing in the ultra-high speed regime, where the scribing speed of 50 m/s was obtained. Finally, selected laser processes were tested in the case of mini-module scribing. Overall, we conclude, that the top-contact layer lift-off processing is the only reliable solution for high-speed P3 laser scribing, which can be implemented in the future terawatt-scale photovoltaic production facilities

Local Band Gap Measurements by VEELS of Thin Film Solar Cells

This work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundarie

Alkali treatments of Cu(In,Ga)Se2 thin‐film absorbers and their impact on transport barriers

We study the impact of different alkali post-deposition treatments by thermal admittance spectroscopy and temperature-dependent current-voltage (IVT) characteristics of high-efficiency Cu(In,Ga)Se2thin-film solar cells fabricated from low-temperature and high-temperature co-evaporated absorbers. Capacitance steps observed by admittance spectroscopy for all samples agree with the widely observed N1 signature and show a clear correlation to a transport barrier evident from IVT characteristics measured in the dark, indicating that defects are likely not responsible for these capacitance steps. Activation energies extracted from capacitance spectra and IVT characteristics vary considerably between different samples but show no concise correlation to the alkali species used in the post-deposition treatments. Numerical device simulations show that the transport barrier in our devices might be related to conduction band offsets in the absorber/buffer/window stack

Review of CdTe1−xSex Thin Films in Solar Cell Applications

Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons